GaN Device Engineer – San Jose
Participate in the development of world-class high-voltage power devices and analog/mixed signal process technologies in a fabless environment
Characterize high-voltage power devices, low and medium voltage MOSFETs, bipolars and other analog components using automated and manual testers.
Analyze characterization data using statistical data analysis tools
Establish correlation between manual and automated tester data for PCM development
Perform device/process simulations and device layout as part of new technology development
Sc Degree in Electrical Engineering with 8 years’ working experience or
Sc Degree in Electrical Engineering with 6 years’ working experience or
D Degree in Electrical Engineering with 3 years’ working experience
Sound understanding of semiconductor physics
Hands-on experience with high-voltage wide-bandgap technologies, including GaN and SiC power device design, fabrication and qualification.
Proven track record of independently designing and taking into volume fabrication high-voltage semiconductor
power switching devices
Proficiency with TCAD tools and familiar with CADENCE layout and simulation tools
Hand-on experience with high voltage testing and data acquisition systems
Good communication and documentation skills